PART |
Description |
Maker |
2N6483 IT502 IT503 |
TRANSISTOR | JFET | N-CHANNEL | DUAL | 500UA I(DSS) | TO-71 晶体管|场效应| N沟道|双| 500UA我(直)|1 TRANSISTOR | JFET | N-CHANNEL | DUAL | 60V V(BR)DSS | 7MA I(DSS) | TO-71VAR
|
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PMBFJ309T/R |
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 12MA I(DSS) | TO-236 晶体管|场效应| N沟道| 25V的五(巴西)直| 12mA的我(直)|36
|
NXP Semiconductors N.V.
|
FC11E |
TRANSISTOR | JFET | N-CHANNEL | DUAL | 40V V(BR)DSS | 2.5MA I(DSS) | SOT-25 晶体管|场效应| N沟道|双| 40V的五(巴西)直| 2.5mA的我(直)|采用SOT - 25
|
Linear Technology, Corp.
|
STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA USB Port Lithium-Ion/Polymer Battery Charger 2A Lithium-Ion/Polymer Battery Charger TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA NanoPower Voltage Detectors TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA 1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 11A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五(巴西)直| 2.8AI(四)|04AA
|
Atmel, Corp.
|
IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 3A条(丁)| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd. Glenair, Inc.
|
2SK1066 2SK1066-20 2SK1066-21 2SK1066-22 |
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 5MA I(DSS) | SOT-23VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset High-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五(巴西)直| 15mA的我(直)|芯片 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp. NEC[NEC]
|
2N3824LP BUP66 |
TRANSISTOR | JFET | N-CHANNEL | 50V V(BR)DSS | TO-46 TRANSISTOR | MOSFET | N-CHANNEL | 520V V(BR)DSS | 6A I(D) | TO-204AA
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FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 30A条(丁)| TO - 220AB现有
|
Powerex, Inc.
|
IRFU320A IRFR320A |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 3.1AI(四)|52AA
|
|
IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 6.7AI(四)|63AB
|
Sumida, Corp.
|